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X-WR-CALNAME:Mechanical Engineering Seminar - Dr. Samuel Graham
X-WR-TIMEZONE:Eastern Time (US & Canada)
BEGIN:VEVENT
DTSTAMP:20261013T093937Z
UID:tag:localist.com\,2008:EventInstance_4354596
DTSTART:20190301T160000Z
DTEND:20190301T171500Z
DESCRIPTION:Talk Title:  The Role of Interfaces on the Thermal Performance 
 of Wide Bandgap Semiconductors\n\n \n\nAbstract: \n\n \n\nWide bandgap ele
 ctronics made from Gallium Nitride (GaN)\, Gallium Oxide (Ga2O3)\, and Haf
 nium Oxide (HfO2) are currently under development due to their potential t
 o create some of the most advanced RF\, power electronics\, and neuromorph
 ic computing devices in the world. However\, the performance and reliabili
 ty of these devices are often controlled by their electrothermal response 
 during device operation.  A key feature which limits thermal control of th
 e peak temperature is the thermal resistance that in encountered at materi
 al interfaces with these devices.  In general\, thermal energy is created 
 through joule heating and must be dissipated by transport across interface
 s within the devices (e.g.\, GaN HEMTs) or across contacts to the devices 
 (e.g.\, in Ga2O3 and HfO2).  Thus\, an understanding of the interfacial th
 ermal transport and methods to create low thermal resistance interfaces is
  of key concern in the development of future electronic devices from these
  materials.\n\n \n\nIn this talk\, we will discuss advancements in thermal
  characterization techniques that have allowed new insights into the impac
 t of interfaces on the thermal response of GaN\, Ga2O3\, and HfO2 electron
 ic devices.  A key aspect will be the heterogeneous integration with high 
 thermal conductivity substrates such as diamond for advanced heat dissipat
 ion.  New high-speed thermal imaging techniques which allow for the charac
 terization of heat generation and heat flow under pulsed and RF conditions
  will be shown.    Finally\, for high heat flux devices such as GaN RF and
  power devices\, the benefits of using packaging substrates with integrate
 d cooling and low coefficients of thermal expansion will be presented.  \n
 \n \n\nBio:\n\n \n\nSamuel Graham is the Eugene C. Gwaltney\, Jr. Professo
 r and Chair of the Woodruff School of Mechanical Engineering at the Georgi
 a Institute of Technology.  He leads the Electronics Manufacturing and Rel
 iability Laboratory which is focused on the electrical and thermal charact
 erization\, packaging\, and reliability of wide bandgap semiconductors\, s
 olar cells\, and flexible electronics.  He also holds a courtesy appointme
 nt in the School of Materials Science and Engineering at Georgia Tech\, a 
 joint appointment with Oak Ridge National Laboratory\, and is a Visiting P
 rofessor at Nagoya University in Nagoya\, Japan. He is a Fellow of ASME\, 
 a member of the Engineering Sciences Research Foundation Advisory Board of
  Sandia National Laboratories and Air Force Scientific Advisory Board.
GEO:39.681725;-75.749184
LOCATION:Composites Manufacturing Science Lab\, Room 106
SUMMARY:Mechanical Engineering Seminar - Dr. Samuel Graham
URL;VALUE=URI:https://events.udel.edu/event/mechanical_engineering_seminar_
 -_dr_samuel_graham
CATEGORIES:Academics
CATEGORIES:College of Engineering
CATEGORIES:Students
CATEGORIES:Lectures & Programs
CATEGORIES:Community
CATEGORIES:Lectures and Programs
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